Uniform Illumination Realized by Large Viewing Angle of Gallium Nitride-Based Mini-LED Chip With Translucent Sublayer Pairs

History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination

| The history of development for gallium–nitridebased light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, w...

Freeform LED lens for uniform illumination.

Light flux from LED must be redistributed to meet the needs of lighting in most cases, a new method is proposed for its secondary optic design. Based on refractive equation and energy conservation, a set of first-order partial differential equations which represent the characters of LED source and desired illumination were presented. The freeform lens was constructed by solving these equations ...

Gallium Nitride-Based Chemical Sensors

The rapid progress in semiconductor materials and devices has promoted the development of the sensors industry. Large band gap semiconductors are ideal candidates for a variety of sensor applications. In particular, gallium nitride (GaN) is used as the sensing element for the development of chemical sensors. The recognition mechanism is based on the selective interaction of anions in solution w...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Ultralow wear of gallium nitride